| PART |
Description |
Maker |
| CG2H80060D |
60 W, 8.0 GHz, GaN HEMT Die
|
Cree, Inc
|
| CG2H30070F |
70 W, 0.5?.0 GHz, 28 V, RF Power GaN HEMT
|
Cree, Inc
|
| TGA2622-CP TGA2622-CP-15 |
9 to 10 GHz 35 W GaN Power Amplifier
|
TriQuint Semiconductor
|
| T1G6001528-Q3 T1G6001528-Q3-15 T1G6001528-Q3-EVB1 |
DC ?6 GHz 18 W GaN RF Power Transistor
DC 6 GHz 18 W GaN RF Power Transistor
|
TriQuint Semiconductor
|
| CMPA1C1D060D |
60 W, 12.7 - 13.25 GHz, 40 V, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| CMPA601C025D |
25 W, 6.0 - 12.0 GHz, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| CMPA2735075D |
75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| CMPA2060025D |
25 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| CMPA1D1E030D |
30 W, 13.75 - 14.5 GHz, 40 V, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| T1G6001032-SM-15 T1G6001032-SM-EVB1 |
10W, 32V, DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
|
